InGaAs-on-insulator FinFETs with reduced off-current and record performance. A 10nm high performance and low-power CMOS technology featuring 3 rd generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate and cobalt local interconnects. High performance multilayer MoS 2 transistors with scandium contacts. Ballistic carbon nanotube field-effect transistors.
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How to report and benchmark emerging field-effect transistors. Ultralow contact resistance between semimetal and monolayer semiconductors. High-speed black phosphorus field-effect transistors approaching ballistic limit. Sub-1nm EOT WS 2-FET with IDS > 600 μA/μm at V DS = 1V and SS < 70 mV/dec at L G = 40 nm. MoS 2 field-effect transistor with sub-10 nm channel length. Monolayer molybdenum disulfide transistors with single-atom-thick gates. Argon plasma induced phase transition in monolayer MoS 2. Uncovering the effects of metal contacts on monolayer MoS 2. First-principles simulations of FETs based on two-dimensional InSe.
Scaling theory of two-dimensional field effect transistors. Extended scale length theory for low-dimensional field-effect transistors. Defect-dominated doping and contact resistance in MoS 2. Phase patterning for ohmic homojunction contact in MoTe 2. Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions. Electrical contacts to two-dimensional semiconductors. Uniform and ultrathin high- κ gate dielectrics for two-dimensional electronic devices. How good can monolayer MoS 2 transistors be? Nano Lett. On monolayer MoS 2 field-effect transistors at the scaling limit. Sub-10 nm two-dimensional transistors: theory and experiment. MoS 2 transistors with 1-nanometer gate lengths. Vertical MoS 2 transistors with sub-1-nm gate lengths. Graphene and two-dimensional materials for silicon technology. Two-dimensional semiconductors for transistors. Radisavljevic, B., Radenovic, A., Brivio, J. Promises and prospects of two-dimensional transistors. Electric field effect in atomically thin carbon films. IEEE International Roadmap for Devices and Systems. Furthermore, low contact resistance of 62 Ω μm is reliably extracted in 10-nm ballistic InSe FETs, leading to a smaller intrinsic delay and much lower energy-delay product (EDP) than the predicted silicon limit. Our InSe FETs can effectively suppress short-channel effects with a low subthreshold swing (SS) of 75 mV per decade and drain-induced barrier lowering (DIBL) of 22 mV V −1.
An yttrium-doping-induced phase-transition method is developed for making ohmic contacts with InSe and the InSe FET is scaled down to 10 nm in channel length. Here we report a FET with 2D indium selenide (InSe) with high thermal velocity as channel material that operates at 0.5 V and achieves record high transconductance of 6 mS μm −1 and a room-temperature ballistic ratio in the saturation region of 83%, surpassing those of any reported silicon FETs. However, so far, no 2D semiconductor-based FETs have exhibited performances that can surpass state-of-the-art silicon FETs. In recent years, two-dimensional (2D) layered semiconductors with atom-scale thicknesses have been explored as potential channel materials to support further miniaturization and integrated electronics.
This defines the final integration density and power consumption at the end of the scaling process for silicon-based chips. Connect the probe tips to the probe station.The International Roadmap for Devices and Systems (IRDS) forecasts that, for silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling of the gate length will stop at 12 nm and the ultimate supply voltage will not decrease to less than 0.6 V (ref.Specifically, the “ON” state occurs when V GS < V T and a negative drain-source voltage is applied. The p-channel enhancement mode MOSFETs operate similarly except that the voltages are reversed. If the V GS is too low, then increasing the V DS further results only in increasing the depletion region around the drain. In the case of n-channel enhancement mode MOSFETs, the “ON” state is reached when V GS > V T and a positive drain-source voltage, V DS, is applied. The minimum voltage required to form the inversion layer is called the gate-to-source threshold voltage, V T. The thickness of this inversion layer is controlled by the magnitude of the gate voltage. \) A depiction of the induced inversion layer with p-type charge carriers in a p-channel enhancement mode MOSFET.
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